Improving breakdown voltage in LDMOS with doped silicon pockets in buried oxide
نویسندگان
چکیده
منابع مشابه
A High Breakdown Voltage Two Zone Step Doped Lateral Bipolar Transistor on Buried Oxide Thick Step
---A novel two zone step doped (TZSD) lateral bipolar junction transistor (LBJT) on silicon-oninsulator (SOI) with buried oxide thick step (BOTS) is proposed. The concept of linear doping and linear oxide thickness for increasing the breakdown voltage has been replaced by using step in doping and step in oxide thickness. These steps result in the creation of additional electric field peaks in t...
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Abstract. Recently, a lateral double diffused metal-oxide-semiconductor (LDMOS) using In0.53Ga0.47As having an extended–p + (ep+) body has been shown to be better than a conventional silicon based LDMOS. In this paper, we show that using a stepped gate (SG) for the InGaAs LDMOS, a significantly improved performance can be achieved than using an extended–p+ body for the InGaAs LDMOS. The propose...
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a r t i c l e i n f o Keywords: Semiconductor–insulator interfaces Semiconductor–semiconductor thin film structures Silicon oxides Photoelectron emission Synchrotron radiation photoelectron spectroscopy Photoelectron emission microscopy (XPEEM) Fully energy-filtered X-ray photoelectron emission microscopy is used to analyze the spatial distribution of the silicon sub-oxide structure at the SiO ...
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ژورنال
عنوان ژورنال: Indian Journal of Science and Technology
سال: 2017
ISSN: 0974-5645,0974-6846
DOI: 10.17485/ijst/2017/v10i1/109412